Intel And Micron Produce 50 Nanometre NAND Flash Device.
Intel And Micron Produce 50 Nanometre NAND Flash Device.
July 27th, 2006: Intel and Micron have claimed an industry first with the sampling of a NAND flash memory built on industry-leading 50 nanometre (nm) process technology.
The samples were manufactured through IM Flash Technologies, a joint development and manufacturing venture from Micron and Intel. Both companies are sampling 4 GB devices now, with plans to mass produce a range of densities on the 50 nm node in 2007.
According to Intel and Micron, the NAND market segment is estimated to reach US$13 to US$16 billion in 2006 and grow to approximately US$25 to US$30 billion by 2010. “Micron entered the NAND business in 2004 using a 90 nm process. In a few short years and through our collaboration with Intel, we are now poised to introduce a leadership product based on a cutting-edge process technology”, says Brian Shirley, Micron vice president of memory.
“Our entry into the NAND flash business has been an incredibly fast ramp”, says Brian Harrison, vice president and general manager, Flash Memory Group, Intel. “We started shipping products to customers in the first quarter of this year, and we’re seeing very high demand across multiple flash densities. Working with Micron, we are poised to transition quickly to the 50 nm process technology and beyond”.