Samsung Releases 4GB DRAM Chips

January 30, 2009: Samsung is talking up its latest storage offering this week, the world’s first 4GB DDR3 DRAM chip using 50 nm process technology.

With data centres increasingly seeking to reduce the number of servers in use, Samsung says that the development of low-power 4Gb DDR3 has become critical in reducing costs, improving server time management and increasing overall efficiency.

The company claims that for the new generation of “green” servers, the 4Gb DDR3’s high density combined with its lower level of power consumption will not only provide a reduction in electricity costs, but also a cutback in instalment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.

“We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor.

“By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market.”

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